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Code: EP111

Description

In response to the challenge to the viability of silicon substrates, the lecture develops the arguments in favour of silicon. Charts show that the "Interconnection Density Gap" is being filled by MCMs and that benefits are obtained from assembling MCMs on silicon.

The categories of various MCM technologies are tabulated in order to consider the advantages of the options. Various requirements combine to favour silicon. Thence a number of practical aspects are considered including line capacitance, resistance, fusing currents, and the problems to be solved with multilevel aluminium on polyimide. Examples of practical MCM developments are presented, including the TI and Thomson 3D stacked MCM which achieves more than 100% utilisation efficiency of silicon. The lecture also examines a "wafer scale" realisation achieved by using a routeing algorithm to bypass non-working cells of a waferscale memory. If it can be done on silicon, it will be done on silicon!